Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated with swift heavy ions at different energies and fluences, and thereafter studied by Raman scattering spectroscopy, UV–visible spectroscopy and transmission electron microscopy. Raman spectra show strong structural modifications in the GaN layer. Indeed, in addition to the broadening of the allowed modes,…

Simultaneous quantification of light elements in thin films deposited on Si substrates using proton EBS (Elastic Backscattering Spectroscopy)

Quantification of light elements content in thin films is an important and difficult issue in many technological fields such as polymeric functional thin films, organic thin film devices, biomaterials, and doped semiconducting structures. Light elements are difficult to detect with techniques based on X-ray emission, such as energy dispersive analysis of X-rays (EDAX). Other techniques,…