Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Amorphous hydrogenated silicon carbide (a-SiC:H) films are produced by remote microwave hydrogen plasma (RHP)CVD using triethylsilane (TrES) as the single-source precursor. The reactivity of particular bonds of the precursor in the activation step is examined using tetraethylsilane as a model compound for the RHP-CVD experiments. The susceptibility of a TrES precursor towards film formation is…