{"id":29458,"date":"2008-10-31T23:37:38","date_gmt":"2008-10-31T22:37:38","guid":{"rendered":"https:\/\/icmsva.vallealto.es\/?articulos_sci=optical-properties-of-zr-and-zro2-films-deposited-by-laser-ablation"},"modified":"2008-10-31T23:37:38","modified_gmt":"2008-10-31T22:37:38","slug":"optical-properties-of-zr-and-zro2-films-deposited-by-laser-ablation","status":"publish","type":"articulos_sci","link":"https:\/\/icmsva.vallealto.es\/?articulos_sci=optical-properties-of-zr-and-zro2-films-deposited-by-laser-ablation","title":{"rendered":"Optical properties of Zr and ZrO2 films deposited by laser ablation"},"content":{"rendered":"<p>Optical\u00a0properties\u00a0of\u00a0Zr\u00a0and\u00a0ZrO2\u00a0films\u00a0in the energy range from 1.5 to 100eV were obtained\u00a0by\u00a0quantitative analysis\u00a0of\u00a0reflection electron energy loss spectroscopy (REELS) and ellipsometry. The\u00a0films\u00a0were prepared oil (I 1 1) silicon substrates\u00a0by\u00a0reactive\u00a0laser\u00a0ablation\u00a0using a zirconium target. For the growth\u00a0of\u00a0ZrO2\u00a0films\u00a0a pressure\u00a0of\u00a05 m Torr\u00a0of\u00a0oxygen in the growth chamber was used. The substrate temperature during deposition was 400 degrees C. The deposits were Studied ex situ\u00a0by\u00a0X-ray diffraction (XRD) and in situ\u00a0by\u00a0X-ray photoelectron spectroscopy (XPS) and REELS. The\u00a0ZrO2\u00a0films\u00a0were found to be polycrystalline With monoclinic structure. The XPS results showed that the oxygen pressure used is the optimal control to produce\u00a0ZrO2\u00a0films\u00a0by\u00a0laser\u00a0ablation. A gap\u00a0of\u00a05eV for the\u00a0ZrO2\u00a0film W IS measured\u00a0by\u00a0REELS.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Optical\u00a0properties\u00a0of\u00a0Zr\u00a0and\u00a0ZrO2\u00a0films\u00a0in the energy range from 1.5 to 100eV were obtained\u00a0by\u00a0quantitative analysis\u00a0of\u00a0reflection electron energy loss spectroscopy (REELS) and ellipsometry. The\u00a0films\u00a0were prepared oil (I 1 1) silicon substrates\u00a0by\u00a0reactive\u00a0laser\u00a0ablation\u00a0using a zirconium target. For the growth\u00a0of\u00a0ZrO2\u00a0films\u00a0a pressure\u00a0of\u00a05 m Torr\u00a0of\u00a0oxygen in the growth chamber was used. The substrate temperature during deposition was 400 degrees C. The deposits were Studied ex&hellip;<\/p>\n","protected":false},"featured_media":0,"template":"","autores":[],"grupos_de_investigacion":[142],"revistas":[5706],"anos":[897],"class_list":["post-29458","articulos_sci","type-articulos_sci","status-publish","hentry","grupos_de_investigacion-nanotecnologia-en-superficies-y-plasma","revistas-microelectronics-journal","anos-897","description-off"],"acf":[],"_links":{"self":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci\/29458","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci"}],"about":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/types\/articulos_sci"}],"version-history":[{"count":0,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci\/29458\/revisions"}],"wp:attachment":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=29458"}],"wp:term":[{"taxonomy":"autores","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fautores&post=29458"},{"taxonomy":"grupos_de_investigacion","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fgrupos_de_investigacion&post=29458"},{"taxonomy":"revistas","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Frevistas&post=29458"},{"taxonomy":"anos","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fanos&post=29458"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}