{"id":28391,"date":"2012-04-30T23:40:54","date_gmt":"2012-04-30T21:40:54","guid":{"rendered":"https:\/\/icmsva.vallealto.es\/?articulos_sci=attenuation-lengths-of-high-energy-photoelectrons-in-compact-and-mesoporous-sio2-films"},"modified":"2026-04-14T11:49:17","modified_gmt":"2026-04-14T09:49:17","slug":"attenuation-lengths-of-high-energy-photoelectrons-in-compact-and-mesoporous-sio2-films","status":"publish","type":"articulos_sci","link":"https:\/\/icmsva.vallealto.es\/?articulos_sci=attenuation-lengths-of-high-energy-photoelectrons-in-compact-and-mesoporous-sio2-films","title":{"rendered":"Attenuation lengths of high energy photoelectrons in compact and mesoporous SiO2 films"},"content":{"rendered":"<figure><img decoding=\"async\" src=\"https:\/\/icmsva.vallealto.es\/wp-content\/uploads\/2012\/04\/Attenuation-lengths-of-high-energy-photoelectrons-1.jpg\" alt=\"Attenuation lengths of high energy photoelectrons in compact and mesoporous SiO2 films\" \/><\/figure>\n<p>We have experimentally evaluated attenuation lengths (AL) of photoelectrons traveling in compact and micro and mesoporous (\u223c 45% voids) SiO <sub>2<\/sub> thin films with high (8.2-13.2 keV) kinetic energies. The films were grown on polished Si(100) wafers. ALs were deduced from the intensity ratio of the Si 1s signal from the SiO <sub>2<\/sub> film and Si substrate using the two-peaks overlayer method. We obtain ALs of 15-22 nm and 23-32 nm for the compact and porous SiO <sub>2<\/sub> films for the range of kinetic energies considered. The observed AL values follow a power law dependence on the kinetic energy of the electrons where the exponent takes the values 0.81 \u00b1 0.13 and 0.72 \u00b1 0.12 for compact and porous materials, respectively.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>We have experimentally evaluated attenuation lengths (AL) of photoelectrons traveling in compact and micro and mesoporous (\u223c 45% voids) SiO 2 thin films with high (8.2-13.2 keV) kinetic energies. The films were grown on polished Si(100) wafers. ALs were deduced from the intensity ratio of the Si 1s signal from the SiO 2 film and&hellip;<\/p>\n","protected":false},"featured_media":28392,"template":"","autores":[],"grupos_de_investigacion":[142],"revistas":[319],"anos":[893],"class_list":["post-28391","articulos_sci","type-articulos_sci","status-publish","has-post-thumbnail","hentry","grupos_de_investigacion-nanotecnologia-en-superficies-y-plasma","revistas-surface-science","anos-893","description-off"],"acf":[],"_links":{"self":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci\/28391","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci"}],"about":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/types\/articulos_sci"}],"version-history":[{"count":1,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci\/28391\/revisions"}],"predecessor-version":[{"id":28393,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/articulos_sci\/28391\/revisions\/28393"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=\/wp\/v2\/media\/28392"}],"wp:attachment":[{"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=28391"}],"wp:term":[{"taxonomy":"autores","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fautores&post=28391"},{"taxonomy":"grupos_de_investigacion","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fgrupos_de_investigacion&post=28391"},{"taxonomy":"revistas","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Frevistas&post=28391"},{"taxonomy":"anos","embeddable":true,"href":"https:\/\/icmsva.vallealto.es\/index.php?rest_route=%2Fwp%2Fv2%2Fanos&post=28391"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}