The sputtering yield amplification (SYA) is a phenomenon based on doping a sputtering target with atoms of higher atomic mass. This doping changes the depth and the direction of the collision cascade in the target surface promoting a higher ejection of target atoms. In this work, we present a new way of generating the SYA phenomenon without the need of expensive and complex deposition systems. This was accomplished by increasing the working pressure and adding small pieces of W, as dopant element, on the racetrack of a Si target. The physical phenomena necessary to promote the SYA, for our experimental parameters, were analysed in two different deposition chambers and two sizes of sputtering targets. Based on the collisions in the gas phase, a calculation on the number of W atoms returning to the racetrack area was made, considering the number of atoms deposited on the thin films, to determine their effect on the cascade of collisions. In addition, calculations with the simulation of metal transport code were developed to determine the location on the racetrack zone the returning atoms were redeposited. By using reference samples placed on the racetrack of the Si target, we found that the percentage of SYA depends on the number of dopant atoms redeposited as well as the depth distribution these atoms had in the racetrack surface.