High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 degrees C and the effect of La2O3 addition

Journal of the European Ceramic Society. 38 (2018) 47-56

High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 degrees C and the effect of La2O3 addition

High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.

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